ST-MOSFET命名规则

R

SOT-23

T

SOT-23-6L

N

SOT-223

S

SO-8

D

DPAK
(“D..T4" for dder P/M)

L

PowerPLAT
2x2:3.3x3.3:
5x5:5x6:8x8

LD

Power FLAT
dual side coolong

B

D PAK
(D,T4"for dder P/M)L

E

ISOTOP

F

TO-220FP

FH

TO-220FPwide creepage

FI

FPAKFP

FU

TO-220FP nanow leade

FW

TO-3PF

H 

HPAK-2H PAK-6

I 

FPAK

K

LPPAK

O

TO-LL

P

TO-220

O 

TO-92

U

IPAK(-S for short leads)

V

Power SO-10

W

TO-247(-4for leads)

WA

TO-247 long leads

Y 

Max247

Breakdown voltage÷10
(with the exception of non 10 mutiples)

N

N-channel

P

P-channel

N...N

N.N Two difenent N-shannel dice

N...P

N.P I Complermenlary Pat

DM or DP

Dual N-Ch or dual P-Ch

DS or PS

N-Ch or P-Ch plus schotlltoy Diode

C

Current sehsing

D

Fast recovery diode

L

Logic level 5V chive optimized

LL

Logic level 4.5V drive optimized

T

Temperahure sersing

V

Super logic level(2.5V-2.7V drive)

U 

Ultra logic level (1.8V drive)

Z  

Ctamped by Zener diode(33V)

H5

StripFET H5(12V,30V)

H6

StripFET H6(-30V,30V)

H7

StripFET H7(-20V,30V)

F3

StripFET F3(40V to 100V)

F5

StripFET F5(40V)

F6

StripFET F6(-100V to 80V)

F7

StriPFET F3(40V to 120V))

M2

MDmesh M2(400V to 650V)

Dm2

MDmesh
Dm2 Series≥400 up to 650V

M2-EP

MDmeshM2 EP(650V)

M6

MDmeshTM
M6(≥650V up to 700V)

M5

MDmeshM5(550V,650V)

K3

Super MeSH K3≥400V

K5

MDmeshK5(800V to1500V)

DKS

MDmesh DK5(≥ 950V up to 1050V)

封装

B=DBC

F=Full Malded

Max Continuous

Current (DC)@80℃

IGBTs Technology Speed

CH=4-32 kHz

M=up to 20 kH2

Temperature sensing/prot ection

T=NTC on board option

S=Temperaure sensing

Breakdown

Voltage /10

Leads finish option

E=Short leads and emitter forward

L=Long leads

封装

Q= SLLIMM-nano

Q= SLLIMM-nano

Technology Series

H=planar IGBT based

C=TFS IGBT based

Leads finish option

L=in Line

Z=Zig-Zag

S=without stand-off

Breakdown

Voltage /10

Special features

T=NTC on board

H=STD Input Low

Side Driving